Switching device based on a thin film of an Azo-containing polymer for application in memory cells

Domenico Attianese, Mario Petrosino, Paolo Vacca, Simona Concilio, Pio Iannelli, Alfredo Rubino, Salvatore Bellone

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Results obtained on a conductive multilevel device realized with a 100 nm azo-polymer film are reported. The capability to switch between three different conductance states makes the device versatile both for Write Once Read Many and Write Many Read Many memory cell application. The analysis of the I-V curves indicates that the hysteretic conductance change with the external voltage can be explained in terms of different hopping distances existing between the nearest neighbors intervening in the two conformational states of the molecular structure. © 2008 IEEE.
Original languageEnglish
Pages (from-to)44 - 46
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number1
DOIs
Publication statusPublished - Jan 2008
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Attianese, D., Petrosino, M., Vacca, P., Concilio, S., Iannelli, P., Rubino, A., & Bellone, S. (2008). Switching device based on a thin film of an Azo-containing polymer for application in memory cells. IEEE Electron Device Letters, 29(1), 44 - 46. https://doi.org/10.1109/LED.2007.910792