TCO Optimization in Si Heterojunction Solar Cells on p-type Wafers with n-SiO

M. Izzi, M. Tucci, L. Serenelli, P. Mangiapane, E. Salza, R. Chierchia, M. Della Noce, I. Usatii, E. Bobeico, L. Lancellotti, L.V. Mercaldo, P. Delli Veneri

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5 Citations (Scopus)


Silicon heterojunction solar cells have largely demonstrated their suitability to reach high efficiencies. We have here focused on p-type c-Si wafers as absorber, considering that they share more than 90% of the solar cell market. To overcome some of the issues encountered in the conventional (n)a-Si:H/(p)c-Si configuration, we have implemented a mixed phase n-type silicon oxide (n-SiOx) emitter in order to gain from the wider bandgap and lower activation energy of this material with respect to (n)a-Si:H. The workfunction of the transparent conductive oxide layer (WTCO) plays also a key role, as it may induce an unfavourable band bending at the interface with the emitter. We have here focused on AZO, a promising alternative to ITO. Different layers with varying WTCOwere prepared, by changing relevant deposition parameters, and were tested into solar cells. The experimental results have been explained with the aid of numerical simulations. Finally, for the n-SiOx/(p)c-Si heterojunction with optimized WTCOa potential conversion efficiency well over 23% has been estimated.
Original languageEnglish
Pages (from-to)134 - 140
Number of pages7
JournalEnergy Procedia
Publication statusPublished - 2015


All Science Journal Classification (ASJC) codes

  • Energy(all)

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