Temperature dependence of the photoemission spectra of Si(1 1 0) between 300 and 1630 K

L. Grill, A. Santoni, S. Prato, L. Petaccia, S. Modesti

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Abstract

The valence band (VB) and the 2p core level of the Si(1 1 0) surface have been investigated as a function of the temperature starting from the `16×2' reconstruction at room temperature up to 1630 K which is close to the Si melting point (1683 K). The `16×2'→(1×1) phase transition at about 1000 K causes a sudden shift of the Si 2p core level spectra. It is associated to a change of the surface band bending and to a change of the surface Si 2p components. The transition is also observed in the VB spectra as a change of their shape and of the emission intensity at the Fermi level. Other changes in the surface structure are detected at about 1320 K. No evidence for a sudden surface melting has been found.
Original languageEnglish
Pages (from-to)55 - 63
Number of pages9
JournalSurface Science
Volume474
Issue number1-3
DOIs
Publication statusPublished - 1 Mar 2001
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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