A new gas sensor device based on a porous silicon membrane has been fabricated. The sensible membrane has been bonded to a 1 cm2Al2O3substrate, where electrical contacts have been previously deposited by vacuum evaporation. In this work we present the results of DC measurements showing a good response of this device to humidity gradients. In this frame, the most striking properties of our device are its selectivity and a fast and full recovery after exposure to humidity levels up to 90%. Moreover, the new fabrication process used to realize the sensor merges the advantages typical of porous silicon with thin film ones, by means of a simple process.
|Publication status||Published - 2001|
|Event||Microcrystalline and Nanocrystalline Semiconductors 2000 - , United States|
Duration: 1 Jan 2001 → …
|Conference||Microcrystalline and Nanocrystalline Semiconductors 2000|
|Period||1/1/01 → …|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
Quercia, L., Della Noce, M., La Ferrara, V., & Di Francia, G. (2001). Testing of porous silicon membranes as a novel humidity sensor. Paper presented at Microcrystalline and Nanocrystalline Semiconductors 2000, United States.