Testing of porous silicon membranes as a novel humidity sensor

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Abstract

A new gas sensor device based on a porous silicon membrane has been fabricated. The sensible membrane has been bonded to a 1 cm2Al2O3substrate, where electrical contacts have been previously deposited by vacuum evaporation. In this work we present the results of DC measurements showing a good response of this device to humidity gradients. In this frame, the most striking properties of our device are its selectivity and a fast and full recovery after exposure to humidity levels up to 90%. Moreover, the new fabrication process used to realize the sensor merges the advantages typical of porous silicon with thin film ones, by means of a simple process.
Original languageEnglish
Publication statusPublished - 2001
EventMicrocrystalline and Nanocrystalline Semiconductors 2000 - , United States
Duration: 1 Jan 2001 → …

Conference

ConferenceMicrocrystalline and Nanocrystalline Semiconductors 2000
CountryUnited States
Period1/1/01 → …

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Quercia, L., Della Noce, M., La Ferrara, V., & Di Francia, G. (2001). Testing of porous silicon membranes as a novel humidity sensor. Paper presented at Microcrystalline and Nanocrystalline Semiconductors 2000, United States.