Thermal and excimer laser assisted growth of Si

R. Larciprete, S. Cozzi, S. Pieretti, I. Vianey, G. Padeletti, E. Masetti, M. Montecchi

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Single wavelength ellipsometry was used to monitor the growth of Si(1-x)Gexalloys obtained by ultrahigh vacuum chemical vapor deposition (CVD) at 570°C on Si and to evaluate the effect of sample irradiation by KrF excimer laser pulses at an energy density above the threshold for surface melting. Laser irradiation was performed during or after the CVD growth. When the Si(1-x)Gexalloys were grown without laser assistance, the recorded ellipsometric curves indicated the presence of pronounced surface roughness, which was confirmed by atomic force microscopy analysis. On line ellipsometry during multiple pulse postgrowth irradiations showed a sudden increase of the ellipsometric angles Ψ and Δ corresponding to the first laser pulse. This behavior attested to the smoothing of the surface microroughness induced by the melt-recrystallization cycle. The excimer laser assisted CVD growth of Si(1-x)Gexalloy layers was also followed. By changing the ratio between the thermal growth rate and the irradiation frequency the kinetics of surface roughening was studied. © 1998 American Vacuum Society.
Original languageEnglish
Pages (from-to)644 - 652
Number of pages9
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number2
Publication statusPublished - 1998


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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