Thermal reactions at the interface between Si and C nanoparticles: Nanotube self-assembling and transformation into SiC

R. Larciprete, S. Lizzit, C. Cepek, S. Botti, A. Goldoni

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The thermal reactions induced in C nanoparticles films deposited on Si substrates were followed by high resolution C1s and Si2p core level spectroscopy. These particles, when annealed at ̃ 1300 K transform into single wall carbon nanotubes [Appl. Phys. Lett. 80 (2002) 1441; Chem. Phys. Lett. 355 (2002) 395]. With increasing temperature a progressive re-hybridization of the sp3into the sp2carbon phase was observed. At 1270 K the C1s core level showed a major component at 284.29 eV related to the graphitic tubes, and minor one at 283.75 eV, attributed to C - Si bonds at the interface, which however do not seem to participate in the nanotube self-assembling. A strong reaction between Si atoms evaporated from the substrate and nanotube walls was observed at 1400 K, which led to the formation of stoichiometric SiC, occurring as a site-confined reaction. © 2003 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)886 - 891
Number of pages6
JournalSurface Science
Publication statusPublished - 10 Jun 2003
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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