The thermal reactions induced in C nanoparticles films deposited on Si substrates were followed by high resolution C1s and Si2p core level spectroscopy. These particles, when annealed at ̃ 1300 K transform into single wall carbon nanotubes [Appl. Phys. Lett. 80 (2002) 1441; Chem. Phys. Lett. 355 (2002) 395]. With increasing temperature a progressive re-hybridization of the sp3into the sp2carbon phase was observed. At 1270 K the C1s core level showed a major component at 284.29 eV related to the graphitic tubes, and minor one at 283.75 eV, attributed to C - Si bonds at the interface, which however do not seem to participate in the nanotube self-assembling. A strong reaction between Si atoms evaporated from the substrate and nanotube walls was observed at 1400 K, which led to the formation of stoichiometric SiC, occurring as a site-confined reaction. © 2003 Elsevier Science B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
Larciprete, R., Lizzit, S., Cepek, C., Botti, S., & Goldoni, A. (2003). Thermal reactions at the interface between Si and C nanoparticles: Nanotube self-assembling and transformation into SiC. Surface Science, 532-535, 886 - 891. https://doi.org/10.1016/S0039-6028(03)00169-9