Time and temperature evolution of light emission from porous silicon prepared from p

G. Amato, G. Di Francia, P. Menna

Research output: Contribution to journalArticle

6 Citations (Scopus)


Photoluminescence (PL) and decay time measurements have been carried out in the energy range from 1.3 eV to 2.3 eV changing the temperature from room temperature (RT) to 10 K on different series of porous silicon samples, coming from lightly (series A) and heavily doped (series B, C) p-type Si substrates. The PL from A samples exhibits a sharp rise and decay, with a maximum at 100 K, while from the B and C series the PL intensity, after an initial increase from RT to 150 K, remains constant for T going from 100 K to 10 K. The temperature dependence of the radiative lifetime in p-samples is explained by invoking confined, localized excitons in nanometre-sized structures. For p+samples the PL lifetime is shorter at low T so that a more efficient radiative process occurs. We discuss this effect in terms of the probability for finding boron impurities even in nanometre-sized structures. The role of these impurities in the excitonic recombination processes is recalled as a possible explanation of the PL behaviour. © 1995.
Original languageEnglish
Pages (from-to)204 - 207
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 15 Jan 1995


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Condensed Matter Physics

Cite this