Towards the morphology control of stain etched porous silicon

L. Schirone, G. Sotgiu, M. Montecchi

Research output: Contribution to journalArticle

8 Citations (Scopus)


Porous silicon films, nearly 100 nm thick, were produced by stain etching of n+-type silicon substrates. The films were studied by a non-destructive technique: dielectric function profiles were deduced by spectral reflectance via a finite difference model, and porosity was computed by the Effective Medium Approximation. The obtained information, combined with High Resolution Electron Microscopy observations, provided a deeper insight on the relations among technological process, morphology and reflective properties. Our preliminary results outline the possibility to control the porosity profile as well the reflectance of the porous films via the oxidizing species concentration in the stain etching solution.
Original languageEnglish
Pages (from-to)405 - 408
Number of pages4
JournalJournal of Porous Materials
Issue number1
Publication statusPublished - 2000


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this