UHV-CVD Ge/Si(100) heteroepitaxy monitored by in situ ellipsometry

R. Larciprete, S. Cozzi, E. Masetti, M. Montecchi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A low cost ellipsometer based on the four detector photopolarimeter was utilized for in situ monitoring of Ge film deposition on Si. The best fit of the ψ-Δ trajectory, correlated with XPS analysis, allowed to evidence the sensitivity in the sub-monolayer range of this technique. The comparison with results given by complementary analysis techniques showed that the early stage of growth is well monitored by this diagnostics. On the contrary, poor agreement is achieved for thick films, when the micro structure dimensions are no longer negligible with respect to the wavelength and the optical properties of the film cannot be properly described by the effective medium approximation.
Original languageEnglish
Pages (from-to)52 - 56
Number of pages5
JournalApplied Surface Science
Volume102
DOIs
Publication statusPublished - 1996

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this