Ultra-shallow junction formation by excimer laser annealing and low energy (<1 keV) B implantation: A two-dimensional analysis

G. Fortunato, L. Mariucci, M. Stanizzi, V. Privitera, S. Whelan, C. Spinella, G. Mannino, M. Italia, C. Bongiorno, A. Mittiga

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Abstract

Formation of shallow junctions has been investigated by using excimer laser annealing in combination with two implantation schemes: BF2-ions at 20 keV and B-ions at low energies (<1 keV). The latter approach was shown to produce best results, with ultra-shallow profiles extending to a depth as low as 35 nm. The lateral distribution of the implanted B following laser annealing has been studied with two-dimensional measurements using selective etching and cross-section transmission electron microscopy (TEM) on samples where the implanted dopant was confined within an oxide mask. The results show that there is substantial lateral diffusion of B under the oxide mask when melting occurs in this region while, if melting under the oxide mask is prevented, the implanted B close to the oxide mask edge was not activated by laser annealing. The results have been explained by numerical heat-flow calculations and it is concluded that the melting of the Si under the masked region and, therefore, the lateral diffusion, can be controlled by the oxide mask thickness. © 2002 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)401 - 408
Number of pages8
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume186
Issue number1-4
DOIs
Publication statusPublished - Jan 2002

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All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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