In this paper, the XPS study of SnO2thin films deposited by the L-CVD technique are presented. The influence of exposition of the as-deposited samples to oxygen O2and hydrogen H2on their stoichiometry was determined. Moreover, on the basis of detailed shape analysis of the Sn3d5/2and O1s XPS peaks, the chemical shift of binding energy corresponding to the change of sample stoichiometry was separated from a shift of the binding energy corresponding to the change of interface Fermi level position EF-Evin the band gap, using a new procedure of deconvolution of the core level XPS peaks. The shift of the Sn3d5/2peak by approximately 0.5 eV towards the lower binding energy after highest H2exposure was interpreted as a true chemical shift due to an increase of Sn2+component, whereas the shift of Sn3d5/2peak and O1s peak after highest O2exposure by approximately 0.5 eV towards the lower binding energy was interpreted as a result of the shift of the interface Fermi level position in the band gap towards the top of valence band at the surface, which corresponds to a deep accumulation layer typical for SnO2thin films. © 2001 Elsevier Science B.V.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry