XPS study of the L-CVD deposited SnO

J. Szuber, G. Czempik, R. Larciprete, D. Koziej, B. Adamowicz

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Abstract

In this paper, the XPS study of SnO2thin films deposited by the L-CVD technique are presented. The influence of exposition of the as-deposited samples to oxygen O2and hydrogen H2on their stoichiometry was determined. Moreover, on the basis of detailed shape analysis of the Sn3d5/2and O1s XPS peaks, the chemical shift of binding energy corresponding to the change of sample stoichiometry was separated from a shift of the binding energy corresponding to the change of interface Fermi level position EF-Evin the band gap, using a new procedure of deconvolution of the core level XPS peaks. The shift of the Sn3d5/2peak by approximately 0.5 eV towards the lower binding energy after highest H2exposure was interpreted as a true chemical shift due to an increase of Sn2+component, whereas the shift of Sn3d5/2peak and O1s peak after highest O2exposure by approximately 0.5 eV towards the lower binding energy was interpreted as a result of the shift of the interface Fermi level position in the band gap towards the top of valence band at the surface, which corresponds to a deep accumulation layer typical for SnO2thin films. © 2001 Elsevier Science B.V.
Original languageEnglish
Pages (from-to)198 - 203
Number of pages6
JournalThin Solid Films
Volume391
Issue number2
DOIs
Publication statusPublished - 16 Jul 2001
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Szuber, J., Czempik, G., Larciprete, R., Koziej, D., & Adamowicz, B. (2001). XPS study of the L-CVD deposited SnO. Thin Solid Films, 391(2), 198 - 203. https://doi.org/10.1016/S0040-6090(01)00982-8